| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film field effect transistor (TFT) which has carrier mobility higher than a conventional one and minimizes defects, and also to provide a method of manufacturing the thin-film field effect transistor. SOLUTION: There is provided the thin-film field effect transistor with metal/insulator/semiconductor structures, with an insulating layer being formed by a cyanoethylated dihydroxypropyl pulluran. By using the cyanoethylated dihydroxypropyl pulluran as an insulating material of the TFT, manufacturing cost is reduced by decreasing a probability of the TFT defects, without performing treatments, such as patternizing and etching or the like by means of photoresist or the like in circuit forming technology in use of former metal semiconductors and insulators. COPYRIGHT: (C)2006,JPO&NCIPI
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