发明名称 PRESSURE WAVE GENERATING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a pressure wave generating element in which rupture of an heating body due to thermal stress is less liable to occur compared with former products and to provide its production method. SOLUTION: This pressure wave generating element is provided with a semiconductor substrate 1 formed of a p type silicon substrate, a heat insulation layer 2 formed of a porous silicon layer formed at one surface side in a thickness direction of the semiconductor substrate 1 and the heating body 3 formed of a metallic thin film formed on the heat insulation layer 2. In the pressure wave generating element, pressure wave is generated by heat exchange between the heating body 3 and a medium attendant upon current supply between both ends in a longitudinal direction of the heating body 3. Two temperature gradient relaxation sections 5 constituted of a high thermal conductive layer which is formed so as to be in contact with a peripheral part of the heating body 3 at the one surface side of the semiconductor substrate 1 and which is formed of a material of higher heat conductivity than that of the heat insulation layer 2, are provided in a shape of coming into respective contact with both flanks in a transverse direction of the heating body 3. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005313086(A) 申请公布日期 2005.11.10
申请号 JP20040134312 申请日期 2004.04.28
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 WATABE YOSHIFUMI;HONDA YOSHIAKI
分类号 B06B1/02;(IPC1-7):B06B1/02 主分类号 B06B1/02
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