METHOD FOR MANUFACTURING SUBSTRATE WAFER FOR LOW-DEFECT SEMICONDUCTOR COMPONENT, COMPONENT OBTAINED BY THE SAME, AND ITS USE

摘要

PROBLEM TO BE SOLVED: To provide an electronic component of which growth defects produced by crystallographic defects, especially pin holes, nanopipes and/or pits and hilogs are less than those of a currently known electronic element. SOLUTION: The method for manufacturing a substrate wafer for a low-defect semiconductor component includes (a) a process for forming a single crystal having a [0001] plane perpendicular to a c-axis thereof, (b) a process for dividing the single crystal into thin disks each having at least one disk surface to be coated, (c) a process for smoothing at least one disk surface and (d) a process for tempering at least one thin disk at a temperature higher than 1770 K. COPYRIGHT: (C)2006,JPO&NCIPI