发明名称 MANUFACTURING PROCESS OF SEED CRYSTAL PLATE
摘要 PROBLEM TO BE SOLVED: To solve the problem that when a seed crystal plate is made from an artificial crystal having a linear defect and an artificial crystal is grown again from the seed crystal plate by hydrothermal synthesis, a linear defect appears in the form inherited from the linear defect in the seed crystal plate in the crystal grown on the surface of the seed crystal plate having the linear defect and the linear defect in the seed plate increases gradually, as it goes through generations of the growth. SOLUTION: The manufacturing process of a seed crystal plate comprises a step to arrange a covering film on -X plane, Y plane, the circumferential portion of Z plane adjoining -X plane and Y plane and the portion of +X plane except for the both ends in the longitudinal direction of its circumferential portion of the first seed crystal plate, a step to place the first seed crystal plate on whose surface the covering film is formed in an autoclave, to grow an artificial crystal and to form a Z plate artificial crystal, a step to take out the first seed crystal plate after the artificial crystal has grown thick enough for more than one seed crystal plate to grow in the crystal growing region and a step to form the more than one second seed crystal plates from the newly grown crystal growing region. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005314166(A) 申请公布日期 2005.11.10
申请号 JP20040134198 申请日期 2004.04.28
申请人 KYOCERA KINSEKI CORP 发明人 OBA KENJI
分类号 C30B29/18;C30B7/10;(IPC1-7):C30B29/18 主分类号 C30B29/18
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