| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is excellent in element isolation property and whose capacitor capacity is large. <P>SOLUTION: The semiconductor memory device is provided with a semiconductor substrate 1 including a separating recess 4, a capacitor oxide film 12b which is formed on at least a part of the side surface of the separating recess 4, a separating oxide film 35 which is formed in the separating recess 4 and formed so that at least a part of the film 35 is isolated from the capacitor oxide film 12b, and a capacitor gate 15 which is formed so that the separating recess 4 is filled with the gate 15 and has an interposer 30 which is clamped with the separating oxide film 35 and the capacitor oxide film 12b. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
