| 摘要 |
<P>PROBLEM TO BE SOLVED: To shorten the manufacturing process of a TFT array substrate and reduce a manufacturing cost by more decreasing the number of times of a photolithography process than that of a conventional manufacturing method. <P>SOLUTION: A gate electrode 2c is formed in a first process. In a second process, a conductive film including a gate insulating film 3, a semiconductor film 4, and a transparent conductive film 5 is laminated on the gate electrode. After a resist layer is formed on the resulting laminate, a first opening 7c for exposing the conductive film to the resist layer at a predetermined position, and a second opening 7d having a predetermined thickness bottom at a position above the gate electrode 2c, are formed respectively to form a resist pattern. Further, the conductive film exposed from the first opening 7c and the semiconductor film located below the former are etched, and the bottom of the second opening 7d is removed to expose the conductive film, and further the conductive film is etched to form a TFT 8. In a third process, a protective layer 8 and a pixel electrode 5a are formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
