发明名称 Processing apparatus
摘要 The temperature of a substrate to be processed on a table can be controlled to be at a desired temperature by using a heating method that simplifies the structure inside the table and requires no special heating arrangement. An electrostatic chuck provided on an upper surface of a susceptor includes an electrode portion formed by a conductive plate or film and a pair of dielectric or insulation sheets sandwiching the electrode portion therebetween. A direct-current voltage from a direct-current power supply is applied to the electrode portion via a feed line for electrostatic absorption. A radio-frequency power supply causes the electrode portion of the electrostatic chuck to heat by resistance heating. This affects the temperature of the semiconductor wafer on the susceptor in the heating method, thereby providing control over its temperature. One output terminal of the radio-frequency power supply is electrically connected to the susceptor via another feed line, while the other output terminal is connected to the ground potential. The radio-frequency power supply outputs radio-frequency radiation of 10 kHz, for example, with a power that is preferably variable and controllable.
申请公布号 US2005236111(A1) 申请公布日期 2005.10.27
申请号 US20040017737 申请日期 2004.12.22
申请人 TOKYO ELECTRON LIMITED 发明人 HIGASHIURA TSUTOMU
分类号 H05B3/68;C23F1/00;H01J37/32;H01L21/00;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):C23F1/00 主分类号 H05B3/68
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