| 摘要 |
In a semiconductor laser element, a semiconductor layer interface 116 containing oxygen atoms is present above an active layer 103 in at least an internal region of a laser resonator. Also, the peak wavelength of photoluminescence of the active layer 103 in regions in the vicinity of end faces of the laser resonator is made shorter than that of the active layer in the internal region of the laser resonator. In the internal region of the laser resonator, vacancies (crystal defects) produced above and in the neighborhood of the semiconductor layer interface containing oxygen atoms are captured at this semiconductor layer interface. Diffusion of the vacancies to the active layer is thus suppressed.
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