METHOD FOR PULLING SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for pulling a silicon single crystal capable of improving yield by preventing exfoliation of cristobalitized crystallized layer and its mingling into the single crystal in particular in producing the silicon single crystal by a CZ process. SOLUTION: In the process of melting a polycrystalline silicon raw material in a quartz crucible and pulling the silicon single crystal from the melt of silicon, melting is carried out at 3×104-4×104Pa pressure in the furnace while pulling is carried out at 1.4×104-4×104Pa pressure in the furnace. Also a crystallized layer with≥10μm thickness may be formed in a region where silicon melt existed on the inside surface of the quartz crucible after completion of pulling succeeding the melting and pulling. The crystallized layer may be formed only on the inside surface of the quartz crucible at a level corresponding to 1/2 or below of maximum depth h0of the silicon melt at the beginning of melting. COPYRIGHT: (C)2006,JPO&NCIPI