| 摘要 |
There are provided a first gate electrode of a first MOS transistor formed on a semiconductor layer via a gate insulating film, a second gate electrode of a second MOS transistor formed on the semiconductor layer via the gate insulating film at a distance from the first gate electrode, first and second one conductivity type impurity introduced regions formed in the semiconductor layer on both sides of the first gate electrode to serve as source/drain of the first MOS transistor, and first and second opposite conductivity type impurity introduced regions formed in the semiconductor layer on both sides of the second gate electrode to serve as source/drain of the second MOS transistor, whereby one of the first and second opposite conductivity type impurity introduced regions is formed to contact mutually to the second one conductivity type impurity introduced region. Accordingly, a semiconductor circuit in a frame region of a substrate in a display device, in which a peripheral circuit or a signal processing circuit having a CMOS FET is built, can be highly integrated rather than the prior art.
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