发明名称 |
Semiconductor laser apparatus and fabrication method thereof |
摘要 |
A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device.
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申请公布号 |
US2005218420(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050076963 |
申请日期 |
2005.03.11 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
BESSHO YASUYUKI;HATA MASAYUKI;INOUE DAIJIRO;YAMAGUCHI TSUTOMU |
分类号 |
H01S5/40;H01L21/00;H01S5/022;H01S5/22;H01S5/32;(IPC1-7):H01L33/00 |
主分类号 |
H01S5/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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