发明名称 NONVOLATILE MEMORY EVALUATION METHOD AND NONVOLATILE MEMORY
摘要 PROBLEM TO BE SOLVED: To evaluate an operation to a hole in a short period of time by generating more holes than holes generated in regular write/erasure. SOLUTION: Operation of nonvolatile memory 100 to a hole is evaluated by generating more holes than the holes generated in normal write/erasure between floating gates and drains in the nonvolatile memory 100 by performing writing to the nonvolatile memory 100 which is an evaluation object under a temperature condition lower than the operating temperature at normal use time, or performing writing on the voltage lower than the operating voltage at normal use time, and leaving the nonvolatile memory 100 under the operating temperature at the time of the normal use time. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005267733(A) 申请公布日期 2005.09.29
申请号 JP20040077649 申请日期 2004.03.18
申请人 FUJITSU LTD 发明人 MATSUI NORIYUKI
分类号 G11C16/02;G01R31/28;G11C29/00;G11C29/06;G11C29/08;G11C29/14;G11C29/50;H01L21/66;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C29/00;H01L21/824 主分类号 G11C16/02
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