发明名称 NANO SILICON LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nano silicon light emitting element whereby a technology of controlling the luminance of each emitted color is carried out within the same manufacturing process, with respect to the manufacturing method of the nano silicon light emitting element for emitting any of the three primary colors (red, green, and blue) of light by receiving emission of an ultraviolet ray and application of a DC voltage, and to provide the nano silicon light emitting element manufactured by using this manufacturing method. <P>SOLUTION: The manufacturing method of the nano silicon light emitting element includes the steps of forming an amorphous SiO<SB>x</SB>film 3 on a semiconductor substrate 1 wherein silicon atoms 2 and oxygen atoms are mixed by using the high frequency sputtering method; and controlling a crystal size of a nano silicon 6 by a gas pressure and a high frequency power, in a process wherein the silicon atoms 2 are formed as the nano silicon whose thickness is about 3.5 nm or below through heat treatment 4 in an inert gas, the nano silicon light-emitting element emitting any of the three primary colors of light at a low operating voltage at room temperature. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268337(A) 申请公布日期 2005.09.29
申请号 JP20040075202 申请日期 2004.03.16
申请人 TOKAI UNIV 发明人 IZUMI TOMIO;SATO KEISUKE;IWASE MITSUO
分类号 H01L33/16;H01L33/34 主分类号 H01L33/16
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