METHOD OF GROWING SILICON DIOXIDE FILMS USING SILICON THIO-HALIDE,申请号KR20040020123-传众专利搜索

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发明名称	METHOD OF GROWING SILICON DIOXIDE FILMS USING SILICON THIO-HALIDE
摘要
申请公布号	KR20050094690(A)	申请公布日期	2005.09.28
申请号	KR20040020123	申请日期	2004.03.24
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	PARK, JAE EUN;LEE, JONG HO;YANG, JONG HO;KIM, YUN SEOK
分类号	H01L21/205;(IPC1-7):H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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