| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor having a low resistance and a shallow dopant diffusion layer by preventing the depletion due to insufficient diffusion of dopants in a gate electrode. SOLUTION: A method of manufacturing the semiconductor device comprises processes of forming a gate insulation film 3 on the surface of a single crystal semiconductor substrate 1; forming the gate electrode 4 consisting of a polycrystalline conductive film on the gate insulation film 3; implanting dopants into the gate electrode 4 and into a surface layer of the semiconductor substrate 1, with the gate electrode 4 as a mask; conducting a first heat treatment by means of a plurality of stick-like halogen lamps from the backside of the semiconductor substrate 1 at such a temperature as to diffuse the dopants implanted into the gate electrode 4, while suppressing the diffusion of the dopants implanted into the surface layer of the semiconductor substrate 1; and conducting a second heat treatment by means of a plurality of stick-like flash lamps so arranged as to cross the plurality of stick-like halogen lamps from the surface of the semiconductor substrate 1, at such a temperature as to activate the dopants implanted into the semiconductor substrate 1 which is higher than the temperature at which the first heat treatment is conducted, for 100 ms or less. COPYRIGHT: (C)2005,JPO&NCIPI
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