| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an element which greatly manifests a tunneling and phase-transformation magnetoresistance (TPMR) effect by precisely controlling a shape, a size, a thickness, a position of each layer, and the direction of a spin of a cluster electrode. SOLUTION: On the top surface of an insulating substrate (90) composed of a B component, an element is formed by combining a MBE method, a lithography method, a powerful external magnetic field, and heat treatment which is composed of tunnel electrode layers 1, 2, 3 (1, 2, 3) of an A component, phase-transformation layers 1, 2 (70, 71) of H component, insulating layers 1, 2 (40, 41) and an insulating protective film (45) of a C component, sensitized layers 1, 2 (30, 31) of a D component, a sensitized protective film (20), forced layers 1, 2 (10, 11) of an F component, spacers 1, 2, 3 (50, 51, 52) of G component, electrodes 1, 2, 3 (80, 81, 82) of an E component. A magnetoresistance element is manufactured, of which the tunneling and phase-transformation magnetoresistance falls off significantly by the application of a small magnetic field. COPYRIGHT: (C)2005,JPO&NCIPI
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