| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the pattern processor, the pattern processing method and the fabricating method of a stencil mask, by which an improvement in throughput for fabricating the stencil mask and an improvement in pattern accuracy of the stencil mask are attained by exposing a repetitive pattern through a partial/full exposure system. <P>SOLUTION: The repetitive pattern is extracted before complementary split, and the complementary split is conducted at the same position for the repetitive pattern, by which an arrangement pattern prepared by the complementary split of the repetitive pattern similarly becomes a repetitive pattern. By this reason, the arrangement pattern is prepared which improves the utilization rate of a partial/full cell. For the repetitive pattern, a full exposure is conducted using a partial/full aperture mask, and remaining patterns are exposed through a variable forming system. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
