| 发明名称 |
Metal-halogen physical vapor deposition for semiconductor device defect reduction |
| 摘要 |
The present invention provides a method of manufacturing a metal silicide electrode ( 100 ) for a semiconductor device ( 110 ). The method comprises depositing by physical vapor deposition, halogen atoms ( 120 ) and transition metal atoms ( 130 ) to form a halogen-containing metal layer ( 140 ) on a semiconductor substrate ( 150 ). The halogen-containing metal layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit ( 400 ) comprising the metal silicide electrode.
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| 申请公布号 |
US2005208762(A1) |
申请公布日期 |
2005.09.22 |
| 申请号 |
US20040903805 |
申请日期 |
2004.07.30 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHEN PEIJUN J.;YUE DUOFENG;MERCER DOUGLAS E.;RUSSELL NOEL |
| 分类号 |
H01L21/285;H01L21/336;H01L21/44;H01L21/4763;H01L21/8234;H01L21/8238;H01L29/78;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/285 |
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