发明名称 |
SEMI-TRANSMISSIVE/SEMI-REFLECTIVE ELECTRODE SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND LIQUID CRYSTAL DISPLAY USING SUCH SEMI-TRANSMISSIVE/SEMI-REFLECTIVE ELECTRODE SUBSTRATE |
摘要 |
<p>Disclosed is a semi-transmissive/semi-reflective electrode substrate comprising a transparent conductive layer which hardly suffers from etching residues and has resistance to etchants for a metal reflective layer (metal layer). Also disclosed are a method for manufacturing such a semi-transmissive/semi-reflective electrode substrate and a liquid crystal display using such a semi-transmissive/semi-reflective electrode substrate. Specifically disclosed are a semi-transmissive/semi-reflective electrode substrate comprising a transparent substrate, a transparent conductive layer which is formed on the transparent substrate, mainly contains indium oxide and further contains one ore more oxides selected from tungsten oxides, molybdenum oxides and niobium oxides, and a metal reflective layer which is formed on the transparent substrate for reflecting outside light and electrically connected to the transparent conductive layer; a method for manufacturing such a substrate; and a liquid crystal display using such a substrate. This semi-transmissive/semi-reflective electrode substrate hardly suffers from residues, and has excellent processability and improved yield.</p> |
申请公布号 |
WO2005086179(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
WO2005JP02602 |
申请日期 |
2005.02.18 |
申请人 |
IDEMITSU KOSAN CO., LTD.;INOUE, KAZUYOSHI;TOMAI, SHIGEKAZU;MATSUBARA, MASATO |
发明人 |
INOUE, KAZUYOSHI;TOMAI, SHIGEKAZU;MATSUBARA, MASATO |
分类号 |
G02F1/1335;G02F1/1343;H01B5/14;(IPC1-7):H01B5/14;G02F1/133;G02F1/134 |
主分类号 |
G02F1/1335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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