| 摘要 |
A fabrication process for a trench type power semiconductor device includes forming a mask layer with openings over a semiconductor surface. Through the openings of the mask, trenches with gates are then formed in the semiconductor body. Thereafter, insulation plugs are formed atop the gates and into the openings of the mask layer. The mask layer is then removed, leaving the insulation plugs extending above the semiconductor surface. Source implant regions are then formed between the trenches. Thereafter, spacers are formed along the sides of the insulation plugs, covering portions of the source implant regions adjacent the trenches. Using these spacers as masks, the exposed portions of the source implant regions are then etched and removed. The remaining source implant regions under the spacers are then driven to form source regions. Thereafter, shallow high conductivity contact regions are formed in the etched regions. Source and drain contacts are then formed over the device. |
