Memory storage circuit e.g. for flip flop circuit for making available video or audio data for given length of time in terminal, has memory cell with PMC resistor having solid electrolyte material with write circuit

摘要

The circuit has a memory cell with a PMC resistor, having a solid electrolyte material with a write circuit (2) for the memory cell creating an electrical connection to the solid electrolyte material. The write circuit is arranged so that the resistor has a resistance value and a logical condition of the memory cell corresponding to the time length of the data. The resistance value in the given length of time achieves or exceeds a given resistance threshold value.