发明名称 |
Termination structure for trench DMOS device and method of making the same |
摘要 |
Embodiments of the present invention are directed to a termination structure provided for a trench DMOS device to reduce occurrence of current leakage resulting from electric field crowding at the border of the active area and a method of manufacturing the same. In one embodiment, the termination structure for the trench DMOS device comprises a substrate of a first type conductivity and an epitaxial layer of the first type conductivity over the substrate. The epitaxial layer has a lower doping concentration than the substrate. A body region of a second type conductivity is provided within the epitaxial layer. A trench extends through the body region between an active area and an edge of the substrate. A gate oxide layer lines the trench and extends to the upper surface of the body region between the trench and the active area. A passivation layer is formed on the gate oxide layer, including sidewalls and a bottom surface of the trench. A metal layer covers portions of the passivation layer on the side walls of the trench to expose a part of the passivation layer over the bottom surface of the trench.
|
申请公布号 |
US2005199952(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20050056450 |
申请日期 |
2005.02.11 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
HSIEH HSIN-HUANG;CHUANG CHIAO-SHUN;CHANG SU-WEN;TSENG MAO-SONG |
分类号 |
H01L21/336;H01L29/06;H01L29/417;H01L29/78;(IPC1-7):H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|