| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the resistance between a storage node electrode and an embedded contact, by forming a prevention film for restraining a change in a semiconductor substrate only between the sidewall of the embedded contact and one diffusion layer of a transistor. <P>SOLUTION: A semiconductor device 1 has an insulation gate type field effect transistor 23, a trench-type capacitor 18, and the embedded contact 20 that is connected to one diffusion layer 27 of the transistor 23 and a second storage node electrode 17 in a capacitor 18 and is formed so that it is embedded into the semiconductor substrate 11, on the semiconductor substrate 11. The second storage node electrode 17 and the embedded contact 20 are formed between the second storage node electrode 17 and the embedded contact 20 without any inclusions while they contact directly, and the prevention film 19 for restraining the change in the semiconductor substrate 11 is formed between the sidewall of the embedded contact 20 and the diffusion layer 27. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
