| 摘要 |
PROBLEM TO BE SOLVED: To correct the defective portion, such that an HF solution does not corrode from the defective portion by cleaning with the HF solution and the like and etching is not carried out to lower layers, such as an insulating film and a board without looking for, in a one by one, the defective portions of a thin film where the thin film has not been formed. SOLUTION: A silica film 7 is formed in a self-aligned manner on a defective portion 4 of an amorphous silica film 3 as a correction film for correcting defection byradiating light 5, whose coefficient of absorption by a substrate 1 is small and whose coefficient of absorption by the amorphous silica film 3 is large from the substrate 1 side (the rear surface of a substrate portion), making light penetrate only through the defective portion 4 of the amorphous silica film 3 in which the amorphous silica film 3 has not been formed, and making an optical CVD reaction caused at the front surface side of the amorphous silica film 3, when the defective portion 4 of the amorphous silica film 3 in which a thin film is not formed locally in the amorphous silica film 3 is corrected by an optical CVD method. COPYRIGHT: (C)2005,JPO&NCIPI
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