| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a polymer for a resist, having small line edge roughness and slightly forming microgel and defects when used as a resist resin in DUV excimer laser lithography, electron beam lithography, etc., and a resist composition and to provide a method for pattern production using the resist composition. <P>SOLUTION: The polymer for a resist comprises at least one kind of a constituent unit selected from the group consisting of constituent units represented by formula (1) and formula (1b) (R<SP>2</SP>and R<SP>3</SP>are each a hydrogen atom or a 1-6C alkyl group; n1 is 1 or 2) and a fluorine-containing constituent unit. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
