Non-volatile memory device with improved sequential programming speed

摘要

A non-volatile memory device suitable to be programmed in a sequential mode. The device includes a plurality of blocks of memory cells each one for storing a word, each block being identified by an address. An input circuit for loading an input address at the beginning of a programming procedure and an internal circuit for setting an internal address to the input address. The device further includes a data input circuit for loading a predetermined number of input words in succession, and a latch circuit for latching a page consisting of the predetermined number of input words. The memory then executes a programming operation including writing the page in the blocks identified by consecutive addresses starting from the internal address, and increments the internal address of the predetermined number in response to the completion of the programming operation.