发明名称 |
Programmable resistor eraseless memory |
摘要 |
An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second electrodes which is characterized by progressive change in resistance in response to program stress of relatively low voltages. A programmable resistance representing stored data is established by stressing the inter-electrode layer between the electrodes. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
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申请公布号 |
US2005190601(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
US20050118309 |
申请日期 |
2005.04.29 |
申请人 |
MACRONIX INTERNATIONAL CO. LTD |
发明人 |
YEH CHIH C.;LAI HAN C.;TSAI WEN J.;LU TAO C.;LU CHIH Y. |
分类号 |
G11C16/04;G11C11/56;H01L27/10;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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