发明名称 FORMING PHASE CHANGE MEMORIES
摘要 Phase change memories (10) may exhibit improved properties and lower cost in some cases by forming the phase change material layers (14) in a planar configuration. A heater (16) may be provided below the phase change material layers (44) to appropriately heat the material (14) to induce the phase changes. The heater (16) may be coupled to an appropriate conductor.
申请公布号 KR20050084240(A) 申请公布日期 2005.08.26
申请号 KR20057010538 申请日期 2005.06.10
申请人 OVONYX, INC. 发明人 CHIANG CHIEN;DENNISON CHARLES H.;LOWREY TYLER A.
分类号 H01L45/00;(IPC1-7):H01L27/115 主分类号 H01L45/00
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