Method of manufacturing a semiconductor component

摘要

A method of manufacturing a semiconductor component includes forming a first electrically insulating layer ( 120 ) and a second electrically insulating layer ( 130 ) over a semiconductor substrate ( 110 ). The method further includes etching a first trench ( 140 ) and a second trench ( 150 ) through the first and second electrically insulating layers and into the semiconductor substrate, and etching a third trench ( 610 ) through a bottom surface of the second trench and into the semiconductor substrate. The third trench has a first portion ( 920 ) and a second portion ( 930 ) interior to the first portion. The method still further includes forming a third electrically insulating layer ( 910 ) filling the first trench and the first portion of the third trench without filling the second portion of the third trench, and also includes forming a plug layer ( 1010 ) in the second portion of the third trench.