| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device in which the mutual diffusion of a p-type dopant and an iron atom is reduced, and to provide a method for manufacturing the optical semiconductor device. SOLUTION: The optical semiconductor device 1 comprises a carbon-doped first cladding layer 3, a second cladding layer 5, an active layer 7, and a buried region 9. The active layer 7 is provided between the first cladding layer 3 and the second cladding layer 5. The buried region 9 is provided so that current is confined to the active layer 7. The buried region 9 contains an iron-doped InP layer 11. The iron-doped InP layer 11 has high resistance so that current is confined to the active layer 7. COPYRIGHT: (C)2005,JPO&NCIPI
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