摘要 |
<p>According to one exemplary embodiment, a floating gate memory cell (202) comprises a stacked gate structure (208) situated on a substrate (204) and situated over a channel region (222) in the substrate (204). The floating gate memory cell (202) further comprises a recess (228) formed in the substrate (204) adjacent to the stacked gate structure (208), where the recess (228) has a sidewall (230), a bottom (232), and a depth (236). According to this exemplary embodiment, the floating gate memory cell (202) further comprises a source (234) situated adjacent to the sidewall (230) of the recess (228) and under the stacked gate structure (208). The floating gate memory cell (202) further comprises a Vss connection region (238) situated under the bottom (232) of the recess (228) and under the source (234), where the Vss connection region (238) is connected to the source (234). The Vss connection region (238) being situated under the bottom (232) of the recess (228) causes the source (234) to have a reduced lateral diffusion in the channel region (222).</p> |
申请人 |
SPANSION LLC;FANG, SHENQING;THURGATE, TIMOTHY;CHANG, KUO-TUNG;FASTOW, RICHARD;HUI, ANGELA, T.;MIZUTANI, KAZUHIRO;KO, KELWIN;KINOSHITA, HIROYUKI;SUN, YU;OGAWA, HIROYUKI |
发明人 |
FANG, SHENQING;THURGATE, TIMOTHY;CHANG, KUO-TUNG;FASTOW, RICHARD;HUI, ANGELA, T.;MIZUTANI, KAZUHIRO;KO, KELWIN;KINOSHITA, HIROYUKI;SUN, YU;OGAWA, HIROYUKI |