PLANARIZING GATE MATERIAL TO IMPROVE GATE CRITICAL DIMENSION IN SEMICONDUCTOR DEVICES,申请号EP20030774839-传众专利搜索

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发明名称	PLANARIZING GATE MATERIAL TO IMPROVE GATE CRITICAL DIMENSION IN SEMICONDUCTOR DEVICES
摘要
申请公布号	EP1559137(A1)	申请公布日期	2005.08.03
申请号	EP20030774839	申请日期	2003.10.14
申请人	ADVANCED MICRO DEVICES, INC.	发明人	AHMED, SHIBLY, S.;TABERY, CYRUS, E.;WANG, HAIHONG;YU, BIN
分类号	H01L21/336;H01L29/423;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
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