Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces

摘要

The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF₃) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization ("RTCVD") systems.