Methods of fabricating nonvolatile memory device

摘要

A fabricating method of nonvolatile memory devices is disclosed. A disclosed method comprises: forming a buffer oxide layer and a buffer nitride layer on the entire surface of a semiconductor substrate and performing a patterning process; forming a sidewall floating gates on the sidewalls of the patterned buffer nitride layer; forming a block oxide layer on the entire surface of the substrate; removing the block oxide layer and the sidewall floating gates deposited on the field region after the substrate is patterned and the field region is opened; depositing a polysilicon layer on the entire surface of the substrate and performing a patterning process to form a word line; forming sidewall spacers on the sidewalls of the sidewall floating gates and the word line; and forming source and drain regions by implanting dopants into the substrate.