| 摘要 |
PROBLEM TO BE SOLVED: To form an n-type impurity high-concentration region and an n-type impurity concentration-change region by one-time n-type impurity injection when an NMOS thin-film transistor having an LDD structure is manufactured. SOLUTION: As a mask, n-type impurities are injected in a high concentration while using a gate electrode 9 having an approximately trapezoidal sectional shape. Then, a semiconductor thin-film 6 under the upper side having the approximately trapezoidal sectional shape of the gate electrode 9 is changed into a channel region 6a composed of an intrinsic region, and the semiconductor thin-film 6 under the oblique side having the approximately trapezoidal sectional shape of the gate electrode 9 is changed into source/drain regions composed of the n-type impurity concentration-change region. Then, the semiconductor thin-films 6 on both sides of the region 6a and the regions 6b is changed onto the source/drain regions 6b composed of the n-type impurity high-concentration region 6c. COPYRIGHT: (C)2005,JPO&NCIPI
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