| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodetector structure for an SiGe surface normal optical path and a method for forming the SiGe normal optical path structure. <P>SOLUTION: This method comprises a step of forming an Si substrate having the surface, a step for forming an Si feature which exists in a direction normal to the Si substrate surface such as a via, a trench, or a pillar, a step of depositing SiGe for covering the Si normal feature to a thickness in the range of 5 to 1,000 nm, and a step for forming the SiGe normal optical path structure having an optical path length in the range of 0.1 to 10 microns. Usually, the SiGe has the Ge concentration in range of 5 to 100 %. The Ge concentration may increase gradually as a deposition thickness. For example, the SiGe has Ge of 20% concentration on the substrate interface of Si, Ge of 30 % concentration on the upper end surface of the SiGe film, and a thickness of 400 nm. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
