| 发明名称 |
Methods for fabricating metal gate structures |
| 摘要 |
Methods of forming a microelectronic structure are described. Those methods comprise providing a substrate comprising source/drain and gate regions, wherein the gate region comprises a metal layer disposed on a gate dielectric layer, and then laser annealing the substrate.
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| 申请公布号 |
US2005145893(A1) |
申请公布日期 |
2005.07.07 |
| 申请号 |
US20030748345 |
申请日期 |
2003.12.29 |
| 申请人 |
DOCZY MARK L.;LIU MARK Y.;KAVALIEROS JACK;BRASK JUSTIN K.;METZ MATTHEW V.;CHAU ROBERT S. |
发明人 |
DOCZY MARK L.;LIU MARK Y.;KAVALIEROS JACK;BRASK JUSTIN K.;METZ MATTHEW V.;CHAU ROBERT S. |
| 分类号 |
H01L21/268;H01L21/336;H01L21/8238;H01L29/49;H01L29/51;(IPC1-7):H01L21/336;H01L29/76;H01L31/062;H01L21/823 |
主分类号 |
H01L21/268 |
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