发明名称 Methods for fabricating semiconductor device test apparatus that include protective structures for intermediate conductive elements
摘要 A method for fabricating apparatus for testing semiconductor devices includes forming protective structures for bond wires or other intermediate conductive elements thereof by sequentially fabricating one or more material layers. After a first layer is formed, each subsequent layer is superimposed upon, contiguous with, and mutually adhered to an underlying layer of the protective structure. In addition, a fence member may be assembled with or formed on the test substrate to align and receive a semiconductor device and, thereby, to facilitate assembly of the semiconductor device with the test substrate. The fence member can be formed integrally with the protective structures or secured over the protective structures. Stereolithographic processes may be used to fabricate the fence member.
申请公布号 US6913988(B2) 申请公布日期 2005.07.05
申请号 US20030396844 申请日期 2003.03.25
申请人 MICRON TECHNOLOGY, INC. 发明人 AKRAM SALMAN
分类号 G01R1/04;H01L21/68;(IPC1-7):H01L21/44 主分类号 G01R1/04
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