发明名称 |
Method for isolating semiconductor devices with use of shallow trench isolation method |
摘要 |
The present invention relates to a method for isolating semiconductor devices. The method includes the steps of: forming a patterned pad nitride layer pattern to open at least one isolation region on the substrate; forming a first trench and a second trench by etching the exposed substrate; depositing a first oxide layer to fill the first trench by performing an atomic layer deposition (ALD) method; etching a portion of the first oxide layer which is filled into the wide trench; and depositing a second oxide layer by performing a deposition method.
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申请公布号 |
US2005142795(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040866618 |
申请日期 |
2004.06.12 |
申请人 |
AHN SANG-TAE;SHEEN DONG-SUN;SONG SEOK-PYO |
发明人 |
AHN SANG-TAE;SHEEN DONG-SUN;SONG SEOK-PYO |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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