发明名称 LINE LEVEL AIR GAP
摘要 PROBLEM TO BE SOLVED: To provide a structure which reduces the dielectric constant between conductive lines by providing an air dielectric. SOLUTION: In a multilevel microelectronic integrated circuit, air comprises a permanent line level dielectric, and an ultra-low-k material constitutes a via level dielectric. In the IC structure, air is supplied to the line level after removal of a sacrificial material by clean thermal decomposition and auxiliary diffusion of byproducts through porosities. Optionally, air is also included within porosities in the via level dielectric. By incorporating air into the extension produced in the invention, intralevel and interlevel dielectric values are minimized. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005175479(A) 申请公布日期 2005.06.30
申请号 JP20040353505 申请日期 2004.12.07
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 CHEN SHYNG-TSONG;CHIRAS STEFANIE R;COLBURN MATTHEW EARL;DALTON TIMOTHY JOSEPH;HEDRICK JEFFREY CURTIS;HUANG ELBERT EMIN;KUMAR KAUSHIK A;LANE MICHAEL WAYNE;MALONE KELLY;NARAYAN CHANDRASEKHAR;NITTA SATYANARAYANA V;PURUSHOTHAMAN SAMPATH;ROSENBERG ROBERT;TYBERG CHRISTY S;YU ROY RONGQING
分类号 H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项
地址