发明名称 |
Thin film dielectrics with perovskite structure and preparation thereof |
摘要 |
Methods of making a ternary oxide and a perovskite-related ternary oxide structure are described. The methods include reacting a binary oxide with a metal oxide or a metal hydroxide to form a ternary oxide dielectric layer on a substrate. Powders, anodes, pressed articles, and capacitors including the ternary oxide or perovskite-related ternary oxide structure as a dielectric layer or other layers are further described.
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申请公布号 |
US2005136292(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20040914986 |
申请日期 |
2004.08.10 |
申请人 |
MARIANI ROBERT D.;KOENITZER JOHN W. |
发明人 |
MARIANI ROBERT D.;KOENITZER JOHN W. |
分类号 |
C01G1/02;C01G33/00;C01G35/00;H01G4/12;H01L21/316;(IPC1-7):B32B9/00 |
主分类号 |
C01G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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