| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof wherein any leakage current can be prevented from occurring in between its silicide layer present on its polysilicons and its other portions. <P>SOLUTION: The semiconductor device has n-type and p-type polysilicons 2, 3 adjacent to each other and has a silicide layer 4 so formed as to be extended from the n-type polysilicon 2 to the p-type polysilicon 3. The silicide layer 4 is formed on the top surfaces of the n-type and p-type polysilicons 2, 3 wherefrom their peripheral edges are excluded. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
