| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a photoelectric converter with high photoelectric conversion characteristic. <P>SOLUTION: The photoelectric converter is equipped with a pin type or nip type structure power generating film which consists of a p layer, an i layer, and an n layer, and another electrode layer which are formed on a transparent or opaque substrate through a transparent conductive film layer. All the p layer, the i layer, and the n layer or at least the i layer is formed of a crystalline Si thin film. When volume distribution about orientation direction to a substrate of each crystal grain is illustrated, the volume distribution has the maximal value in the direction <110> and the volume of the crystal grain oriented in the direction which is inclined by 15 degrees or more from the direction <110> is no more than half of the volume in the direction <110>. Dangling bond density is calculated from two kinds of plane directions which constitute crystal grain boundary of crystal grains which adjoins in crystalline Si thin film. The dangling bond density has small grain boundary. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
