| 发明名称 |
TRANSISTOR AND CVD APPARATUS USED FOR FORMING GATE INSULATING FILM THEREOF |
| 摘要 |
<p>Disclosed is a transistor wherein deterioration in the characteristics due to fluorine contained in a formed film is suppressed. Specifically, the concentration of fluorine contained in a gate insulating film (3) is suppressed to 1 x 10<20> atoms/cm<3> or less. Consequently, the transistor can have excellent reliability even when it is driven at relatively high temperatures for a long time.</p> |
| 申请公布号 |
WO2005055325(A1) |
申请公布日期 |
2005.06.16 |
| 申请号 |
WO2004JP18051 |
申请日期 |
2004.12.03 |
| 申请人 |
SHARP KABUSHIKI KAISHA;TSUBATA, TOSHIHIDE;SUGIHARA, TOSHINORI |
发明人 |
TSUBATA, TOSHIHIDE;SUGIHARA, TOSHINORI |
| 分类号 |
H01L21/31;H01L21/336;H01L29/786;(IPC1-7):H01L29/786;H01L21/318 |
主分类号 |
H01L21/31 |
| 代理机构 |
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