THIN FILM TRANSISTOR USING METAL INDUCED LATERAL CRYSTALLIZATION METHOD AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor shortening a crystallization process in the case of using a metal induced lateral crystallization (MILC) method, and its manufacturing method. SOLUTION: An active layer 300 comprising polycrystalline silicon that is formed on an insulating substrate is formed of a first MILC crystallization region and a second MILC crystallization region by carrying out an MILC method with different temperatures. COPYRIGHT: (C)2005,JPO&NCIPI