发明名称 |
Magnetic random access memory device and a method of switching a magnetic orientation of memory elements therein |
摘要 |
An aspect of the present invention is an MRAM device. The MRAM device includes a plurality of magnetic memory elements, a sense line coupled to the plurality of magnetic memory elements for sensing a magnetic orientation of each of the plurality of magnetic memory elements wherein the sense line includes a first via and a second via and wherein the sense line is utilized to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements.
|
申请公布号 |
US2005128801(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20030733089 |
申请日期 |
2003.12.11 |
申请人 |
NICKEL JANICE H.;BHATTACHARYYA MANUJ;WALMSLEY ROBERT G. |
发明人 |
NICKEL JANICE H.;BHATTACHARYYA MANUJ;WALMSLEY ROBERT G. |
分类号 |
G11C11/14;G11C11/16;(IPC1-7):G11C11/14 |
主分类号 |
G11C11/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|