| 摘要 |
A CMOS-type solid state imaging device and a production method therefore; specifically, a solid state imaging device capable of optimum condensing by a single in-layer lens, and a production method for forming a precision in-layer lens. The solid state imaging device comprises a plurality of wirings and a plurality of lenses provided above a light receiving unit, at least one of the plurality of lenses being formed by a single in-layer lens. The production method for a solid sate imaging device comprises forming a concave surface or a convex surface on a first insulation layer having a first refractive index by a selective etching method, and forming a second insulation layer having a second refractive index on the concave surface or the convex surface to form an in-layer lens matching a light receiving unit. |
