| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a new contact exposure method for developing a photoresist which copes with F<SB>2</SB>lithography, and to provide a preferable exposure mask used therefor, and to provide an exposure device for carrying out the method. <P>SOLUTION: The contact exposure method uses the exposure mask having a projection shape. Patterning of the resist for F2 exposure using fluoropolymer is enabled by the exposure method and device using the exposure mask, and can be used meaningfully for developing the resist for F2 lithography. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
