SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device operating at a high-speed with the conventional semiconductor device driving voltage sustained as it is, and also to provide a method for manufacturing the same. SOLUTION: A semiconductor layer 17 is formed on an n-epitaxial layer 2 formed on a silicon substrate 1. A trench 6 is formed extending through the semiconductor layer 17 and stopping at the middle of the thickness of the n-epitaxial layer 2. The semiconductor layer 17 contains a p-region 3 having a specified thickness, and the trench 6 penetrates through the p-region 3. An oxide film 7 made of silicon oxide is formed to cover the internal wall of the trench 6. A polysilicon layer 8 is arranged to fill up the vacancy in the trench 6 to a specified level. On the polysilicon layer 8, a low-resistance layer 9 is formed, mainly composed of a metal element that constitutes a gate electrode 10 in collaboration with the polysilicon layer 8. COPYRIGHT: (C)2005,JPO&NCIPI