| 发明名称 |
Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects |
| 摘要 |
A silicon-on-insulator (SOI) memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs.
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| 申请公布号 |
US2005121664(A1) |
申请公布日期 |
2005.06.09 |
| 申请号 |
US20050035786 |
申请日期 |
2005.01.13 |
| 申请人 |
PROGRESSANT TECHNOLOGIES, INC. |
发明人 |
KING TSU-JAE |
| 分类号 |
G11C11/40;(IPC1-7):H01L31/033 |
主分类号 |
G11C11/40 |
| 代理机构 |
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